賦能高效可靠光儲系統 - 英飛凌功率半導體解決方案.pdf

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1、1陳立烽高級技術總監工業與基礎建設業務英飛凌科技 大中華區賦能高效可靠光儲系統賦能高效可靠光儲系統-英飛凌功率半導體解決方案英飛凌功率半導體解決方案2Copyright Infineon Technologies AG 2024.All rights reserved.2024-08-28Challenges in Solar&ESS system13Infineon Discrete Solution29Infineon Module Solution314WBG solution in Solar&ESS428Table of contents3Copyright Infineon Tec

2、hnologies AG 2024.All rights reserved.2024-08-28Challenges in Solar&ESS system13Infineon Discrete Solution29Infineon Module Solution314WBG solution in Solar&ESS428Table of contents4Copyright Infineon Technologies AG 2024.All rights reserved.2024-08-28光伏和儲能應用的發展以實現凈零排放目標光伏和儲能應用的發展以實現凈零排放目標Source:IEA-

3、World Energy Outlook 2023(Oct 2023),S&P Global PV installations tracker(April 2024)到2030年，1.5C的目標將推動光伏發電的發展-NZE的安裝步入正軌 更高的功率密度，降低/W 電站:更高的系統電壓，監控和智能電網集成 商業/住宅:使用ESS驅動混合逆變器改善自我消耗;預計太陽能+ESS+(電動汽車充電)的附加率更高 高功率商業解決方案越來越多地使用分立-最高功率串逆變器和中央逆變器模塊解決方案 電池儲能系統(BESS)是可再生能源整合的重要推動者，支持電網基礎設施的短時間存儲，電網的穩定性和可靠性以及停電時

4、的備用電源。到2029年，電表前端裝機容量的增長將超過1太瓦時結構框圖結構框圖市場規模和增長市場規模和增長 TAM in Mio EUR 光伏光伏010002000300040005000202420252026202720282029百萬CentralMicroString inverterString hybridPower optimizer17%2120311335514095467627110200400600800202420252026202720282029百萬Commercial ESSResidential ESSUtility ESS21%2904565446607473

5、64市場規模和增長市場規模和增長 TAM in Mio EUR 儲能儲能市場趨勢和增長引擎市場趨勢和增長引擎5Copyright Infineon Technologies AG 2024.All rights reserved.2024-08-28光儲應用中系統場景的多樣化光儲應用中系統場景的多樣化Solar systemESS systemSolar,ESS,EV charging system integration6Copyright Infineon Technologies AG 2024.All rights reserved.2024-08-28Grid forming 構網型

6、變流器構網型變流器Source:EPE(IEEE ECCE Europe)2023 Tutorial7Copyright Infineon Technologies AG 2024.All rights reserved.2024-08-28不斷變化的市場需求對光伏儲能變換器提出了更多的需求不斷變化的市場需求對光伏儲能變換器提出了更多的需求 Dynamic application trend Solar inverter Power rating:136KW,150KW,225KW,320KW Battery system in ESS:280Ah,314Ah,340Ah,587Ah High

7、er reliability Lower cost 8Copyright Infineon Technologies AG 2024.All rights reserved.2024-08-28一站式解決方案一站式解決方案,賦能光伏儲能系統賦能光伏儲能系統 縮短研發周期,領先一步2方案有助于產品 提升功率密度,設計緊湊 系統穩健可靠,安全耐用435微控制器Wi-Fi+藍牙氮化鎵器件IGBT1碳化硅器件TRENCHSTOP分立式器件PSoC微控制器AIROC Combo二合一解決方案650 V/1200 V CoolSiCMOSFETCoolGaN HEMT9Copyright Infineon

8、 Technologies AG 2024.All rights reserved.2024-08-28Challenges in Solar&ESS system13Infineon Discrete Solution29Infineon Module Solution314WBG solution in Solar&ESS428Table of contents10Copyright Infineon Technologies AG 2024.All rights reserved.2024-08-28英飛凌英飛凌IGBTIGBT 器件發展歷程器件發展歷程p emitter(substra

9、te)n fieldstopn fieldstopp emitter p emitter IFX:IGBT7n-basisn fieldstopp emitter 11Copyright Infineon Technologies AG 2024.All rights reserved.2024-08-28IGBT 7 產品產品12Copyright Infineon Technologies AG 2024.All rights reserved.2024-08-281200 V TRENCHSTOP IGBT7 High system robustness,further improved

10、 humidity and cosmic ray ruggednessLower losses up to 50%compared to previous generationsKey facts of IGBT7Low Vcesat2 V(H7:0.8*H3&1*S7)40A,175C Low Eon loss2,44 mJ(H7:0.54*H3&0.63 S7)40A,175CLow Eoff loss2.13 mJ(H7:0.85*H3&0.58*S7)40A,175CFull rated soft diode44.555.566.577.588.591.922.12.22.32.42.

11、5ETotal Inom,175 C mJVCE(sat)Inom,175 C VVCE(sat)vs.ETOTALS7 SCT2 SC Short Circuit H3 SCH7non-SCS6 SC13Copyright Infineon Technologies AG 2024.All rights reserved.2024-08-28650 V TRENCHSTOP IGBT7 High system robustness,further improved humidity and cosmic ray ruggednessLower losses up to 39%compared

12、 to previous generations(total loss)Key facts of IGBT7 H7Low Vcesat25%lower compared to H53%lower compared to S5Low Eon loss77%lower compared to H5 54%lower compared to S5Low Eoff loss20%higher compared to H527%lower compared to S5All results are measured 75A,175CFull rated soft diode2.52.72.93.13.3

13、3.53.73.94.11.51.61.71.81.922.1ETotal InommJVCE(sat)InomVVCE(sat)vs.ETOTAL 175 CH5CompetitorS5H7H714Copyright Infineon Technologies AG 2024.All rights reserved.2024-08-28Challenges in Solar&ESS system13Infineon Discrete Solution29Infineon Module Solution314WBG solution in Solar&ESS428Table of conten

14、ts15Copyright Infineon Technologies AG 2024.All rights reserved.2024-08-28持續迭代的持續迭代的Easy 產品系列產品系列LMP Lineup25,4 x 35,6 mm33,8 x 48 mm48 x 56,7 mm150 x 62 mm110 x 62 mmEasy 750 VEasy 1BEasy 2BEasy 3BEasy 4B6A600AModule Current16Copyright Infineon Technologies AG 2024.All rights reserved.2024-08-28Eas

15、y 模塊靈活的適用于工業領域模塊靈活的適用于工業領域Reduced assembly effort leads to improved production time while using an easy mount-in solutionHigh degree of freedom for a compact inverter design which leads to reduced system costsMore efficient cooling which supports high power density at optimized performanceCustomize

16、solution leads to an easy design in while also protecting customers IPHigh integration level possible by using Easy module approachEasy Module Solution.and many more17Copyright Infineon Technologies AG 2024.All rights reserved.2024-08-281000 V PV system1500 V PV systemEasy DC/DC 產品系列產品系列-光伏光伏1000VDC

17、&1500VDC應用應用Orderable,registerable and available nowIn developmentProduct Idea15 A45 A30 ADF16MR12W1M1HF_B67DF225R12W2H3F_B11FS3L200R10W3S7F_B11DF8MR12W1M1HF_B67DF150R12W1H3F_B11FS3L200R10W3S7F_B94Easy1BEasy3BEasy2BFS3L400R10W3S7F_B11DF4-19MR20W3M1HF_B11DF11MR12W1M1HF_B67DF14MR12W1M1HF_B672 MPPTs3 M

18、PPTs4 MPPTsInput currentDF4-19MR20W3M1HF_H9460 AEasy1BEasy3BEasy2BEasy4B18Copyright Infineon Technologies AG 2024.All rights reserved.2024-08-281000 V PV system1500 V PV systemEasy DC/AC 產品系列產品系列-光伏光伏 1000VDC&1500VDC應用應用 20 kWup to 60 kWup to 200 kWup to 100 kWF3L75R12W1H3_B11F3L11MR12W2M1_B74F3L400

19、R10W3S7_B11*F3L400R10W3S7F_B11*F3L100R12W2H3_B11F3L150R12W2H3_B11F3L200R12W2H3_B11F3L200R07W2S5_B11FS3L100R07W3S5_B11F3L400R07W3S5_B59FS3L30R07W2H3F_B11FS3L25R12W2H3_B11FS3L40R07W2H5F_B11FS3L50R07W2H3F_B11F3L8MR12W2M1HP_B11300 kWF3L600R10W4S7F_H11Easy1BEasy3BEasy2BEasy4B*125kW with 600Vac,185kW with

20、 800Vac*165kW with 600Vac,225kW with 800VacF3L600R10W3S7_B11Orderable,registerable and available nowIn developmentF3L500R12W3H7_H1119Copyright Infineon Technologies AG 2024.All rights reserved.2024-08-28風冷儲能系統方案風冷儲能系統方案Output current A100A200A300A150A250AF3L225R12W3H3_B11F3L340R12W3H7_H11Output powe

21、r KW100kW150kW200kW250kW300kW350kWF3L420R12W4H7_H11 F3L3MR12W3M1H_H11 F3L500R12W3H7_H20(380Vac)(Th=90C,Vout=690/380V,fsw=16kHz,no overload,DPWM)2/F3L340R12W3H7_H1120Copyright Infineon Technologies AG 2024.All rights reserved.2024-08-28源網側和工商業儲能方案總覽源網側和工商業儲能方案總覽PCS ApplicationFormation TopoIFX Soluti

22、on1500V 1.254MW,CentralDC/ACNPC11200V Primepack:900A/1400A/1600A/2400A1200V ED3:450A/600A/900A1200V 62mm:600A/800A1500V 1.8MW,CentralDC/ACNPC2 or 2L2300V Primepack:FF1800R23IE71200V Primepack:FF2400RB12IP71500V 200kW,C&I and CentralDC/ACNPC1 with 1200V chip1200V Easy3B:F3L340R12W3H7_H111200V Easy 4B

23、:F3L420R12W4H7_H111200V SiC:F3L3MR12W3M1H_H111000V 100kW,C&IDC/AC1200V Easy 3B:F3L500R12W3H7_H201200V Easy 3B:F3L225R12W3H3_B111000V 50100kW,C&IDC/ACNPC1 with 650V Chip650V Easy 2B:F3L150/200R07W2H3_B1121Copyright Infineon Technologies AG 2024.All rights reserved.2024-08-28TRENCHSTOP IGBT7 1200V in

24、EconoDUAL 3TRENCHSTOPIGBT7 1200VLower conduction and switching lossesEnhanced controllability of du/dt and diode softnessOverload capability at Tvj,op=175CFF900R12ME7_B11 with reduced Vcesatand VFImproved cosmic ray robustnessHigher power densities in a wide variety of applications22Copyright Infine

25、on Technologies AG 2024.All rights reserved.2024-08-28EconoDUAL 3 with TRENCHSTOP IGBT7New features FF600R12ME4_B72FF600R12ME7_B1123Copyright Infineon Technologies AG 2024.All rights reserved.2024-08-28EconoDUAL 3 with 1200V TRENCHSTOP IGBT7Up to 900A 1200V EconoDUAL 3TRENCHSTOP IGBT7 technologyHigh

26、er inverter output current for the same frame sizeAvoidance of paralleling of IGBT modules Reduced system costs by simplification of the inverter systems IC AIGBT4IGBT7225-300FF300R12ME7_B11450FF450R12ME4_B11FF450R12ME7_B11600FF600R12ME4_B72FF600R12ME7_B11750FF750R12ME7_B11900FF900R12ME7_B11_P optio

27、nally available Key FeaturesTypical ApplicationsAvailable Product Portfolio24Copyright Infineon Technologies AG 2024.All rights reserved.2024-08-28應用實例應用實例 2.5MW PCS 設計設計ParametersValuesVdc1500VdcVout690VacPout2.5MWOL1.1Rgon/Rgoff/fsw3kHzNumber of parallel4PF1/-1Ta45two-phase flow heatsinkModulation

28、 schemeSVPWMANPC1-00ANPC topology4*3 modules form one three-level ANPC bridge arm25Copyright Infineon Technologies AG 2024.All rights reserved.2024-08-28FF900R12ME7_B11 4/for 2.5MW PCS Rgon=1ohm,Rgoff=5ohmRated condition/PF=1T1/T4D1/D4T2/T3D2/D3T5/T6D5/D6P_cond(W)181.60236.854.447.365.3P_sw(W)293.50

29、00048.1P_total(W)475.10236.854.447.3113.5EffRated condition/PF=-1T1/T4D1/D4T2/T3D2/D3T5/T6D5/D6P_cond(W)0206.247.3261.148.754.3P_sw(W)053.800281.50P_total(W)026047.3261.1330.254.3Eff455565758595105115125135145T1/T4D1/D4T2/T3D2/D3T5/T6D5/D6ThTvj 2.5MW,fsw=3kHz,ANPC1-00,Rth_ha=0.037,Ta=45PF=1PF=-126Co

30、pyright Infineon Technologies AG 2024.All rights reserved.2024-08-28FF900R12ME7_B11 4/for 2.5MW(1.1OL 2.75MW)PCS Rgon=1ohm,Rgoff=5ohmRated condition/PF=1T1/T4D1/D4T2/T3D2/D3T5/T6D5/D6P_cond(W)210.30271.861.153.473.5P_sw(W)345.4000051.9P_total(W)555.70271.861.153.4125.4EffRated condition/PF=-1T1/T4D1

31、/D4T2/T3D2/D3T5/T6D5/D6P_cond(W)0233.453.4295.155.161.1P_sw(W)058.400327.50P_total(W)0291.853.4295.1382.661.1Eff455565758595105115125135145T1/T4D1/D4T2/T3D2/D3T5/T6D5/D6ThTvj 2.75MW,fsw=3kHz,ANPC1-00,Rth_ha=0.037,Ta=45PF=1PF=-127Copyright Infineon Technologies AG 2024.All rights reserved.2024-08-281

32、0 days定制化賦能產品應用的差異化定制化賦能產品應用的差異化Product DefinitionPrototypingShort Flow ProjectShort Flow Fact Sheet receivedPrototypes availableProject StartSample evaluationat customer6-8 weeks max.5 months max.Customer confirmed prototypes,order agreement doneStart of productionPrototype design approvalOne fits

33、all is historyCustomization of standard products for customers differentiationFaster Time2Market Close collaboration for fast decision,feedback and commitments28Copyright Infineon Technologies AG 2024.All rights reserved.2024-08-28Challenges in Solar&ESS system13Infineon Discrete Solution29Infineon

34、Module Solution314WBG solution in Solar&ESS428Table of contents29Copyright Infineon Technologies AG 2024.All rights reserved.2024-08-28英飛凌在碳化硅產品領域擁有超過英飛凌在碳化硅產品領域擁有超過25年的豐富經驗年的豐富經驗30Copyright Infineon Technologies AG 2024.All rights reserved.2024-08-28Scalability through flexible portfolio從容應對各大行業面向能

35、源可持續發展的趨勢，從容應對各大行業面向能源可持續發展的趨勢，英飛凌碳化硅成為戰略核心英飛凌碳化硅成為戰略核心Silicon Carbide must haves getting ready today to continue shaping the market tomorrow 1.Trench technology Committed to support steep volume growth of our customers Capacity invest along with dedicated projects to increase output and to ensure s

36、upply security Committed to offer highest degree of innovation by leveraging strong expertise in interconnect technologies Sophisticated soldering processes for maximum chip performance Committed to offering optimal balance between performance and robustness Keeping up with state-of-the-art IGBT rob

37、ustness,while boosting efficiency performance to new levels.2.Synergies betweenchip and package3.Manufacturing know-how and supply security4.Scalable portfolio and system offering+Committed to providing multiple choices for different system requirements of our customers Extensive CoolSiC and recomme

38、nded EiceDRIVERisolated gate driver portfolio31Copyright Infineon Technologies AG 2024.All rights reserved.2024-08-28在輕載效率中，值越低越好在軟開關拓撲中，值越低越好在硬開關拓撲中，值越低越好值越低，柵極驅動功率損耗越低新一代新一代CoolSiCTMMOSFET Gen2技術，突破技術創新的邊界技術，突破技術創新的邊界RDSONx QGD(m*C)（150 C,800 V,28 A）：）：RDSONx QOSS(m*C)（150 C,800 V）：）：RDSONx EOSS(m

39、*J)（150 C,800 V）：）：RDSx QG(m*C)at 150 C:經典經典MOSFET FOM（來自低壓硅領（來自低壓硅領域）域）品質因數（品質因數（FOM）對比：數值越低，能效越高）對比：數值越低，能效越高DC-DC其他供應商其他供應商其他供應商其他供應商Infineon products:IMBG120R030M1H,IMBG120R026M2H.Other SiC MOSFETs:value of parameters taken from datasheet in internet for the latest generations of 1200 V SiC MOSF

40、ETs in D2PAK 7pin:C3M0032120J1,SCT4018KW7,NTBG030N120M3S,SCT025H120G3AG,QGD=total charge associated to CRSSat given conditions,Qoss=total charge associated to COSSat given conditions.EOSS=total energy associated to COSSat given conditions32Copyright Infineon Technologies AG 2024.All rights reserved.

41、2024-08-28CoolSiC MOSFETs 更優異的性能更優異的性能:G2 Vs G1Improved chip performanceImproved.XT package interconnectBest-in-class RDS(on)and the most granular portfolio in the market Overload operation up to Tvj=200C and avalanche robustnessMaximum RDS(on)at high temperature specified in datasheetRobust short-c

42、ircuit ratingHigh reliability2 sMaintaining G1 proven level,very low DPM rates520%lower power losses over typical load use cases12%better thermal resistance,Rth,j-c8 m in G2 compared to 30 m in G1,12 products enable the optimal product choiceNew in G2!New in G2!Enlarged maximum gate-source voltage-1

43、0 V to+23 V 33Copyright Infineon Technologies AG 2024.All rights reserved.2024-08-281500V/200kW+儲能解決方案儲能解決方案 F3L3MR12W3M1H Pout=200kW*120%Vo=690Vac,Io=167Arms*120%Vdc=1500Vdc PF=+1/-1 Fsw=16kHz SVPWM Th=90C Rg1,4,5,6=4/12ohm;Rg2,3=4.7/4.7ohmPF=-1,Eff=99.25%PF=1,Eff=99.33%SwitchLossTjmaxPconPswPtotT1

44、/T461.501.5128.6D1/D400090T2/T3100.366.2166.6139.9T5/T640.5040.5114.6D5/D600090SwitchLossTjmaxPconPswPtotT1/T400090D1/D477.2077.2135.3T2/T310066.7166.7137.3T5/T600090D5/D657.5057.5129.534Copyright Infineon Technologies AG 2024.All rights reserved.2024-08-28英飛凌豐富的產品組合，滿足對碳化硅的各類需求英飛凌豐富的產品組合，滿足對碳化硅的各類需

45、求Industrial gradeAutomotive gradeCoolSiCTMDiodeCoolSiCTMHybridCoolSiCTMMOSFETCoolSiCTMDiodeCoolSiCTMHybridCoolSiCTMMOSFETDiscreteDiscreteModuleDiscreteIPMModuleHP moduleDiscreteDiscreteDiscreteModule400 V600 V650 V750 V1200 V1700 V2000/2300 V3300 VContinuous extension of portfoliovoltagesStatus:June

46、 2024Broad and best-in-class product portfoliomass productionG2 in developmentG1 in developmentG2 mass productionG1 mass productionG2 in developmentG2 mass production35Copyright Infineon Technologies AG 2024.All rights reserved.2024-08-28We empower a world of unlimited GREEN energy為世界注入無限綠色能源為世界注入無限綠色能源36