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通過Xtacking技術，將外部電路與MemoryStack直接鍵合-行業數據

通過Xtacking技術，將外部電路與MemoryStack直接鍵合
通過Xtacking技術，將外部電路與MemoryStack直接鍵合
用于32層和64層3D NAND試產，2019年量產的64層TLC閃存將外圍電路和存儲陣列分別在兩片晶圓上制造，然后W2W鍵合成一體。2020年底，長江存儲發布了128層3D TLC NAND (X2-9060)，采用Xtacking 2.0架構，在國內首次實現了128層閃存量產。進入2022年，長江存儲發布第三代Xtacking (Xtacking 3.0)，推出232層堆疊的X3-9070 TLC閃存。這款232層產品堆疊了兩個116層陣列板，并引入背側源極連接(BSSC)等新技術，將I/O速度提升50%、存儲密度提高70%
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通過Xtacking技術，將外部電路與MemoryStack直接鍵合_第1頁
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通過Xtacking技術，將外部電路與MemoryStack直接鍵合_第42頁
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通過Xtacking技術，將外部電路與MemoryStack直接鍵合_第44頁
所屬報告： 電子行業深度報告：HBM訓練側、推理側需求的共同焦點突破存算協同范式下的“存儲墻”困境-250326（36頁）.pdf
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