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全球DRAM存儲容量變化（單位：BGB）-行業數據

全球DRAM存儲容量變化（單位：BGB）
全球DRAM存儲容量變化（單位：BGB）
在總產量上，據 CFM閃存市場數據顯示，預計 2024年 NAND Flash將超過 8000億GB當量，相比去年增長 20%；DRAM預計增長達 15%，將達到 2370億 Gb當量。
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全球DRAM存儲容量變化（單位：BGB）_第1頁
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所屬報告： 半導體行業專題研究：AI PC元年有望開啟領航存儲市場步入“價值”長景氣新周期-240403（19頁）.pdf
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